Shallow junctions by ion implantation and rapid thermal annealing

This publication has 14 references indexed in Scilit:

• Dopant redistribution in silicon-on-sapphire films during thermal annealing
  Applied Physics Letters, 1986
• Channel ion implantation for small-geometry high-performance CMOS-SOS circuits
  IEEE Transactions on Electron Devices, 1986
• Optimization of oxygen-implanted silicon substrates for CMOS devices by electrical characterization
  IEEE Transactions on Electron Devices, 1986
• Precipitation and Diffusivity of Arsenic in Silicon
  Journal of the Electrochemical Society, 1985
• Transient‐Enhanced Diffusion during Furnace and Rapid Thermal Annealing of Ion‐Implanted Silicon
  Journal of the Electrochemical Society, 1985
• Channeling effect for low energy ion implantation in Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• The formation of shallow low-resistance source—Drain regions for VLSI CMOS technologies
  IEEE Transactions on Electron Devices, 1985
• Rapid thermal annealing of arsenic and boron-implanted silicon
  Applied Physics Letters, 1983
• Channeling effect of low energy boron implant in
  IEEE Electron Device Letters, 1983