Dopant redistribution in silicon-on-sapphire films during thermal annealing
- 17 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (11) , 704-706
- https://doi.org/10.1063/1.96695
Abstract
Arsenic depth distributions in silicon-on-sapphire films, after annealing at 900 °C for a range of times, have been studied by Rutherford backscattering and spreading resistance techniques. A continuum pipe diffusion model is developed which accounts satisfactorily for the rapid diffusion and segregation effects observed. In addition, the same model predicts two-dimensional dopant profiles with several novel features relevant to microelectronic device processing.Keywords
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