Deep implants by channeling implantation
- 28 February 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 2 (1-3) , 139-143
- https://doi.org/10.1016/0921-5107(89)90088-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Planar channeling effects in Si(100)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Channeled-ion implantation of group-III and group-V ions into siliconJournal of Applied Physics, 1978
- Uniform doping of channeled-ion implantationJournal of Applied Physics, 1978
- Channeling of boron ions into siliconApplied Physics Letters, 1977