Molecular beam epitaxy growth of GaAs/AlAs double-barrier resonant tunnelling devices on (311)A substrates
- 1 February 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (2) , 267-270
- https://doi.org/10.1088/0268-1242/7/2/015
Abstract
The authors investigate resonant tunnelling in p-type silicon-doped GaAs/AlAs double-barrier quantum well structures grown by molecular beam epitaxy on the (311)A GaAs surface. Their current-voltage characteristics compare favourably with structures grown on the conventional (100) orientation using beryllium as the acceptor.Keywords
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