Temperature-dependent electron mobility in GaN: Effects of space charge and interface roughness scattering
- 10 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2) , 223-225
- https://doi.org/10.1063/1.111511
Abstract
We compute temperature-dependent electronic mobilities in GaN through Monte Carlo simulations. Bulk material having ionized impurities, and a quantum well structure are examined. Our values show good agreement with recently obtained experimental data on bulk GaN only when space-charge scattering is taken into account. Though a simple form for the internal potential variation has been used, more realistic space-charge distributions could easily be incorporated into the present simulation scheme. Mobilities for GaN quantum wells have also been obtained by explicitly taking account of interface roughness scattering. The predicted values yield a theoretical upperbound fairly close to measured data.Keywords
This publication has 31 references indexed in Scilit:
- Monte Carlo simulation of electron transport in gallium nitrideJournal of Applied Physics, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor depositionApplied Physics Letters, 1992
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Growth of AlN/GaN layered structures by gas source molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975
- A Phase Shift Analysis of the Scattering of Carriers by Ionised Impurities in Non-Degenerate SemiconductorsPhysica Status Solidi (b), 1973
- Electron Mobility in Plastically Deformed GermaniumPhysica Status Solidi (b), 1966