A very high sensitivity phototransistor structure
- 1 August 1985
- journal article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 6 (8) , 649-673
- https://doi.org/10.1007/bf01011944
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- A very high gain and a wide dynamic range static induction phototransistorIEEE Electron Device Letters, 1985
- Heterostructure bipolar transistors: What should we build?Journal of Vacuum Science & Technology B, 1983
- The camel diode as photodetector with high internal gainIEEE Electron Device Letters, 1982
- The permeable base transistor and its application to logic circuitsProceedings of the IEEE, 1982
- Theory of a modulated barrier photodiodeApplied Physics Letters, 1981
- An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxyIEEE Electron Device Letters, 1981
- Modulated barrier photodiode: A new majority-carrier photodetectorApplied Physics Letters, 1981
- A majority-carrier camel diodeApplied Physics Letters, 1979
- The Exports of Fruits and Trucks from FukushimaJapanese Journal of Human Geography, 1954
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949