Modulated barrier photodiode: A new majority-carrier photodetector
- 15 August 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (4) , 340-342
- https://doi.org/10.1063/1.92715
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Charge injection over triangular barriers in unipolar semiconductor structuresApplied Physics Letters, 1981
- Fast response InP/InGaAsP heterojunction phototransistorsElectronics Letters, 1981
- InP/InGaAs heterojunction phototransistorsIEEE Journal of Quantum Electronics, 1981
- Sensitive GaAlAs/GaAs wide-gap emitter phototransistor for high current applicationsIEEE Electron Device Letters, 1980
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- High-gain InGaAsP-InP heterojunction phototransistorsApplied Physics Letters, 1980
- Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxyElectronics Letters, 1980
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor depositionApplied Physics Letters, 1979
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975