High-gain InGaAsP-InP heterojunction phototransistors
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2) , 192-194
- https://doi.org/10.1063/1.91821
Abstract
InGaAsP‐InP heterojunction phototransistors have been fabricated by liquid phase epitaxy. The phototransistors have optical gains greater than 100 for 1.26‐μm radiation. High internal current gains (≳300) have been achieved. Phototransistor relative spectral response has been measured for wavelengths in the range 0.7–1.5 μm.Keywords
This publication has 14 references indexed in Scilit:
- Evidence for tunneling in reverse-biased III-V photodetector diodesApplied Physics Letters, 1980
- Be-implanted 1.3-μm InGaAsP avalanche photodetectorsApplied Physics Letters, 1979
- Long-wavelength InGaAsP avalanche photodiodesApplied Physics Letters, 1979
- InGaAsP/InP photodiodes: Microplasma-limited avalanche multiplication at 1-1.3-µm wavelengthIEEE Journal of Quantum Electronics, 1979
- Ion-implanted InGaAsP avalanche photodiodeApplied Physics Letters, 1978
- High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μmApplied Physics Letters, 1978
- InGaAsP/InP Avalanche PhotodiodeJapanese Journal of Applied Physics, 1978
- 1.0–1.4-μm high-speed avalanche photodiodesApplied Physics Letters, 1978
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- High-gain wide-gap-emitter Ga 1 -
x
Al
x
As-GaAs phototransistorElectronics Letters, 1976