INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS
- 1 November 1963
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (9) , 156-157
- https://doi.org/10.1063/1.1753911
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICONApplied Physics Letters, 1963
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962
- Anomalous electron absorption effects in metal foils: theory and comparison with experimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962