Monte Carlo simulation of 0.35- mu m gate-length GaAs and InGaAs HEMTs
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 618-628
- https://doi.org/10.1109/16.47765
Abstract
No abstract availableThis publication has 61 references indexed in Scilit:
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