(Cd,Zn)Se multi-quantum-well LEDs: homoepitaxy on ZnSe substrates and heteroepitaxy on buffer layers
- 8 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 26-31
- https://doi.org/10.1016/0022-0248(95)00870-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- High-brightness blue and green light-emitting diodesApplied Physics Letters, 1995
- Zinc selenide single crystal growth by chemical transport reactionsJournal of Crystal Growth, 1995
- Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transportPhysica B: Condensed Matter, 1993
- Homoepitaxial growth and characterization of ZnSe on different ZnSe substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1992
- Blue-green laser diodesApplied Physics Letters, 1991
- Strain-free, ultra-high purity ZnSe layers grown by molecular beam epitaxyJournal of Materials Research, 1990
- RHEED Patterns and Surface Morphology of ZnSe Homoepitaxial Films Grown by MBEJapanese Journal of Applied Physics, 1989
- Homoepitaxial growth of ZnSe on dry-etched substratesApplied Physics Letters, 1989
- ZnSe homoepitaxial layers grown at very low temperature by atmospheric pressure metalorganic vapor-phase epitaxyJournal of Applied Physics, 1989
- Homo-epitaxial growth of ZnSe by MBEJournal of Crystal Growth, 1988