Vapor sensor realized in an ultracompact polarization interferometer built of a freestanding porous-silicon form birefringent film
- 21 May 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 15 (6) , 834-836
- https://doi.org/10.1109/lpt.2003.811344
Abstract
A novel vapor sensor that uses polarization interferometry in a form birefringent porous-silicon film is introduced, analyzed, and experimentally characterized. Simulations and analysis of accuracy, versatility, stability, and control of dynamic range of the device are provided. The simulation accurately predicts the polarization interference signal, which is used to estimate the effective refractive indexes characterizing the form birefringence of a porous-silicon film with 0.001 accuracy. The device was tested for the detection of heptane concentration in a range of 342-20 000 ppm (=2.0%).Keywords
This publication has 10 references indexed in Scilit:
- Novel porous silicon vapor sensor based on polarization interferometrySensors and Actuators B: Chemical, 2002
- Highly sensitive recognition element based on birefringent porous silicon layersJournal of Applied Physics, 2001
- Porous-silicon vapor sensor based on laser interferometryApplied Physics Letters, 2000
- Anomalous birefringence of light in free-standing samples of porous siliconJournal of Experimental and Theoretical Physics, 2000
- Investigation of optical anisotropy of refractive-index-profiled porous silicon employing generalized ellipsometryJournal of Materials Research, 1999
- Vapor sensing using the optical properties of porous silicon Bragg mirrorsJournal of Applied Physics, 1999
- Permeated porous silicon for hydrocarbon sensor fabricationSensors and Actuators A: Physical, 1999
- Novel liquid sensor based on porous silicon optical waveguidesIEEE Photonics Technology Letters, 1998
- The structural and luminescence properties of porous siliconJournal of Applied Physics, 1997
- Gas Identification by a Single Gas Sensor using Porous Silicon as the Sensitive MaterialJapanese Journal of Applied Physics, 1995