Acoustic attenuation study of vanadium-doped GaAs

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Abstract
The authors have measured the low-temperature acoustic attenuation in a range of vanadium-doped GaAs samples between 200 MHz and 2 GHz. In n-type material three distinct loss phenomena are found, distinguishable by their symmetry properties. The authors attribute the relation peak associated with the elastic constant C44 to V2+centres. Analysis of the peak shape indicates the presence of levels 34 K above the ground state. The behaviour of a loss component which becomes stronger towards lower temperatures is attributed to the presence of the vanadium-related complex (V+-X), while an intense light-induced low-temperature loss component is attributed to (V2+-X).