MOSFET Detector Evaluation
- 1 January 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 21 (1) , 390-394
- https://doi.org/10.1109/tns.1974.4327488
Abstract
Metal-oxide-semiconductor devices have been evaluated as low-energy (250 eV to 50 keV) x-ray dosimeters. They can be used to measure dosages as low as 1 rad (SiO2) to as high as 105 rad (SiO2). Their small size and basic simplicity make it possible to form arrays of dosimeters for x-ray imaging. When compared to thermoluminescent dosimeters (TLD's), photographic film, and thermopiles, MOSFET dosimeters offer distinct advantages in terms of their small size, their sensitivity to photon energies below 10 keV, and their adaptability to an electrical readout system.Keywords
This publication has 4 references indexed in Scilit:
- Time-Resolved X-Ray Detection Using MOS-C DetectorsIEEE Transactions on Nuclear Science, 1972
- Metal-Oxide-Semiconductor X-Ray DetectorsIEEE Transactions on Nuclear Science, 1972
- Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate InsulatorIEEE Transactions on Nuclear Science, 1971
- Radiation-induced space-charge buildup in MOS structuresIEEE Transactions on Electron Devices, 1967