Time-Resolved X-Ray Detection Using MOS-C Detectors

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Abstract
To develop a fast x-ray detector with a memory, we have performed experiments with metal-oxide-semiconductor capacitor (MOS-C) devices. For timeresolved recording of the x-ray pulse, a linear array of detectors is uniformly irradiated while the elements are sequentially biased at Δt time intervals; significant positive charge trapping occurs in each element of the array only during the period Δt when the high field bias is applied across the dielectric. Detection of 10-ns resolution has been recorded. Time-resolution is presently limited by the bandwidth limitation of the bias strobing method.