A study of base built-in field effects on the steady-state current gain of heterojunction bipolar transistors
- 31 July 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (7) , 845-849
- https://doi.org/10.1016/0038-1101(90)90064-l
Abstract
No abstract availableKeywords
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