Silicon interfaces with high temperature superconductors
- 2 October 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 236 (3) , 377-384
- https://doi.org/10.1016/0039-6028(90)90480-v
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- (001) studied at 60 K with momentum-resolved inverse photoemissionPhysical Review B, 1990
- Photoemission studies of high-temperature superconductorsSurface Science Reports, 1990
- Core and valence XPS spectra of clean, cleaved single crystals of YBa2Cu3O7Journal of Electron Spectroscopy and Related Phenomena, 1990
- Electronic structure of the high-temperature oxide superconductorsReviews of Modern Physics, 1989
- Cu adatom interactions with single- and polycrystalline andPhysical Review B, 1988
- Surfaces and Interfaces of High-Tc Superconductors for Contact and Junction Formation Studied with Synchrotron Radiation Photoemission SpectroscopyJapanese Journal of Applied Physics, 1988
- Electronic structures of the surface and its modification by sputtering and adatoms of Ti and CuPhysical Review B, 1988
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperaturesPhysical Review B, 1987
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979