Influence of Pulse Width on CdS Film Prepared by YAG Laser Ablation
- 1 April 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (4R) , 1783-1786
- https://doi.org/10.1143/jjap.32.1783
Abstract
CdS films were deposited on glass substrates using two kinds of YAG lasers: one with a long pulse width of τ=100 µs and one with a short pulse width of τ=15 ns. Scanning electron microscopy observation and X-ray diffraction patterns showed that the film formed by the long pulse laser with a low energy density has a smooth surface and highly oriented texture. Resistivity is distributed in a wide range: 100-2000 Ω·cm and 10-100 Ω·cm for the films formed by long and short pulse lasers, respectively. Measurement of optical transmission spectra suggests the existence of an impurity level in the low resistivity film. Streak image of the plume obtained using an image converter camera showed that the average velocity of ablated luminous particles is about 5×104 cm/s for long pulse laser ablation and (3-9)×105 cm/s for the short one.Keywords
This publication has 8 references indexed in Scilit:
- p-Type Characteristics of Cu-Doped CdS Thin FilmsJapanese Journal of Applied Physics, 1992
- Excitation effect on laser ablated particles by second laser irradiation.The Review of Laser Engineering, 1991
- Effects of oxygen partial pressure after deposition on crystalline orientation of laser deposited YBa2Cu3O7-x thin films.Journal of the Magnetics Society of Japan, 1991
- Superconductivity and crystallinity of Ba2Y1Cu3O7−δ thin films prepared by pulsed laser deposition with substrate bias voltageJournal of Applied Physics, 1990
- Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7Applied Physics Letters, 1988
- Observation of two distinct components during pulsed laser deposition of high T c superconducting filmsApplied Physics Letters, 1988
- Growth of highly oriented CdS thin films by laser-evaporation depositionApplied Physics Letters, 1988
- Characterization of the pulsed laser evaporation process: Selenium thin-film formationApplied Physics Letters, 1987