Single crystalline silicon dioxide films on Mo(112)
- 31 August 2001
- journal article
- conference paper
- Published by Elsevier in Solid-State Electronics
- Vol. 45 (8) , 1471-1478
- https://doi.org/10.1016/s0038-1101(01)00250-7
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Epitaxial Growth of SiO2 on Mo(112)Surface Review and Letters, 2000
- Crystallographic study of interaction between adspecies on metal surfacesProgress in Surface Science, 1998
- Theory of Si 2pcore-level shifts at the Si(001)-interfacePhysical Review B, 1996
- X-ray photoelectron spectroscopic characterization of ultra-thin silicon oxide films on a Mo(100) surfaceSurface Science, 1992
- Interaction between particles adsorbed on metal surfacesSoviet Physics Uspekhi, 1989
- Effect of electrostatic screening on energy positions of electron spectra near/Si interfacesPhysical Review B, 1988
- ESCA Studies of MoO2 and MoO3Surface and Interface Analysis, 1988
- Core-level binding-energy shifts at surfaces and in solidsSurface Science Reports, 1987
- Characterization of oxide impurities on Pt and their effect on the adsorption of CO and H2Surface Science, 1985
- Influence of the image force on the band gap in semiconductors and insulatorsJournal of Applied Physics, 1980