Thermal dependence of voiding in narrow aluminum microelectronic interconnects
- 4 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (23) , 2399-2401
- https://doi.org/10.1063/1.102027
Abstract
A model for the thermal dependence of atomic flux in passivated Al/AlSi very large scale integrated interconnects is presented. The model is derived from stress-induced alterations in the equilibrium vacancy concentration in the metal, and has an exponential form which can be interpreted as a temperature-dependent activation energy. The flux model together with the thermal hysteresis of stress reported for thin films can be used to describe a wide range of voiding behavior.Keywords
This publication has 5 references indexed in Scilit:
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