Analysis of thermal stress-induced grain boundary cavitation and notching in narrow Al-Si metallizations
- 4 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (1) , 31-33
- https://doi.org/10.1063/1.100113
Abstract
Grain boundary voiding and notching have been found to produce failures in narrow metallizations during thermal aging. The nucleation and growth of grain boundary voids are considered to occur as a result of grain boundary sliding and the subsequent stress‐induced mass transport. A proposed model yields the linewidth and temperature dependence of the observed failure rate.Keywords
This publication has 9 references indexed in Scilit:
- Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd filmsJournal of Materials Research, 1987
- A model for stress-induced metal notching and voiding in very large-scale-integrated Al–Si (1%) metallizationJournal of Vacuum Science & Technology B, 1987
- Stress-induced grain boundary fractures in Al–Si interconnectsJournal of Vacuum Science & Technology B, 1987
- Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal historyIEEE Transactions on Electron Devices, 1987
- Noise and Grain-Boundary Diffusion in Aluminum and Aluminum AlloysPhysical Review Letters, 1985
- Stress relaxation and hillock growth in thin filmsActa Metallurgica, 1982
- Diffusive growth of grain-boundary cavitiesActa Metallurgica, 1981
- The growth of grain-boundary voids under stressPhilosophical Magazine, 1959
- Diffusional Viscosity of a Polycrystalline SolidJournal of Applied Physics, 1950