Measurement of proton induced radiation damage to CMOS transistors and p-i-n diodes
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 37 (3) , 1238-1241
- https://doi.org/10.1109/23.57372
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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