Correlation of Particle-Induced Displacement Damage in Silicon

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Abstract
Correlation is made between the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons. These measurements are compared to calculations of the nonionizing energy deposition in silicon as a function of particle type and energy. Measurements were made of displacement damage factors for 2N2222A and 2N2907A switching transistors, and for 2N3055, 2N6678, and 2N6547 power transistors, as a function of collector current using 3.7 - 175 MeV protons, 4.3 - 37 MeV deuterons, and 16.8 - 65 MeV helium ions. Long term ionization effects on the value of the displacement damage factors were taken into account. In calculating the energy dependence of the nonionizing energy deposition, Rutherford, nuclear elastic, and nuclear inelastic interactions, and Lindhard energy partition were considered. The main conclusions of the work are as follows: 1) The ratio of the displacement damage factors for a given charged particle to the 1 MeV equivalent neutron damage factor, as a function of energy, falls on a common curve which is independent of collector current. 2) Deuterons of a given energy are about twice as damaging as protons and helium ions are about eighteen times as damaging as protons.

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