Photoconductive a-SiNx:H films deposited at high substrate temperatures
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 937-940
- https://doi.org/10.1016/0022-3093(85)90815-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Persistent photoconductivity inlayered structuresPhysical Review B, 1985
- Effects of rf Power and Substrate Temperature on Properties of a-SiNx:H Films Prepared by Glow-Discharge of SiH4–N2–H2Japanese Journal of Applied Physics, 1984
- Optical absorption of a-SiNx:H films prepared by RF glow-dischargeJournal of Non-Crystalline Solids, 1983
- Electrical properties of glow discharge amorphous SiNx: H thin filmsThin Solid Films, 1983
- Properties of Amorphous Films Prepared from SiH4–N2–H2 Gas MixtureJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978