Electrical properties of glow discharge amorphous SiNx: H thin films
- 1 August 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 106 (4) , 263-274
- https://doi.org/10.1016/0040-6090(83)90338-3
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 12 references indexed in Scilit:
- Properties of Chemically Vapor-Deposited Amorphous SiNx AlloysJapanese Journal of Applied Physics, 1982
- Microcrystalline Si: H Film and Its Application to Solar CellsJapanese Journal of Applied Physics, 1982
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen DopingJapanese Journal of Applied Physics, 1982
- Properties of Amorphous Films Prepared from SiH4–N2–H2 Gas MixtureJapanese Journal of Applied Physics, 1982
- Preparation and Properties of Amorphous Silicon Produced by a Consecutive, Separated Reaction Chamber MethodJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Optical properties and hydrogen concentration in amorphous siliconThin Solid Films, 1979
- Formation of thin Si3N4 films by nitrogen ion implantation into siliconThin Solid Films, 1979
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971