Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry
- 1 December 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 206 (1) , 288-293
- https://doi.org/10.1016/0040-6090(91)90437-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Modeling AlxGa1−xAs optical constants as functions of compositionJournal of Applied Physics, 1990
- Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parametersIEEE Electron Device Letters, 1988
- High-field drift velocity of electrons in silicon inversion layersSolid-State Electronics, 1988
- Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulatorsPhysical Review B, 1988
- Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1−xAs multiple heterostructuresJournal of Applied Physics, 1986
- Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructuresJournal of Applied Physics, 1986
- An enhanced sensitivity null ellipsometry technique for studying films on substrates: Application to silicon nitride on gallium arsenideJournal of Applied Physics, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Peroxide etch chemistry on 〈100〉In0.53Ga0.47AsJournal of Vacuum Science and Technology, 1982
- Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eVJournal of the Electrochemical Society, 1981