Photoluminescence detection of impurities introduced in silicon by dry etching processes
- 1 November 1986
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 41 (3) , 175-178
- https://doi.org/10.1007/bf00616836
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Noble Gas Atoms as Chemical Impurities in SiliconPhysica Status Solidi (a), 1984
- New model of the irradiation-induced 0.97-eV () line in silicon: AcomplexPhysical Review B, 1981