Investigation of Zn diffusion in InP using dimethylzinc as Zn source
- 1 November 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 114 (3) , 321-326
- https://doi.org/10.1016/0022-0248(91)90048-a
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Diffusion of Zn acceptors during MOVPE of InPJournal of Crystal Growth, 1991
- Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPEJapanese Journal of Applied Physics, 1990
- High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1990
- Zinc doping in InP grown by atmospheric pressure metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Zn Diffusion into InP Using Dimethylzinc as a Zn SourceJapanese Journal of Applied Physics, 1989
- A study of p-type dopants for InP grown by adduct MOVPEJournal of Crystal Growth, 1984
- Doped InGaP grown by MOVPE on GaAsJournal of Crystal Growth, 1984
- The Temperature-Dependent Diffusion Mechanism of Zn in InP Using the Semiclosed Diffusion MethodJapanese Journal of Applied Physics, 1984
- Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressureJournal of Crystal Growth, 1983
- Diffusion profiles of zinc in indium phosphideJournal of Physics D: Applied Physics, 1975