Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2342
Abstract
The effects of arsenic (As) and gallium (Ga) incorporation in InP layers in GaInAs/InP heterostructures grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) on lattice parameter and band-gap energy of InP layers were studied. It was found that As and Ga incorporation is prolonged during InP growth after arsine (AsH3) and triethylgallium (TEG) flows are turned off, resulting in a lowering of the band gap energy and change in the lattice parameter of the InP layers. This incorporation is considered to originate from both desorption and diffusion of their outgassing sources produced during the growth of a thick GaInAs layer.Keywords
This publication has 25 references indexed in Scilit:
- GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion TechniqueJapanese Journal of Applied Physics, 1990
- Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxyJournal of Applied Physics, 1989
- Leakage current in GaInAs/InP photodiodes grown by OMVPEJournal of Crystal Growth, 1989
- Proposal of Source Supply Efficiency Analysis for InGaAsP Grown by MOVPEJapanese Journal of Applied Physics, 1989
- Planar-structure InP/InGaAsP/InGaAs avalanche photodiodes with preferential lateral extended guard ring for 1.0-1.6 mu m wavelength optical communication useJournal of Lightwave Technology, 1988
- Monolithic GaInAs/InP FET inverter amplifiers for long-wavelength OEICsElectronics Letters, 1988
- Monolithic pin -HEMT amplifier on an InP substrate grown by OMVPE for long-wavelength fibre optic communicationsElectronics Letters, 1988
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Hydrogen and deuterium permeation in copper alloys, copper–gold brazing alloys, gold, and the i n s i t u growth of stable oxide permeation barriersJournal of Vacuum Science and Technology, 1978
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974