Leakage current in GaInAs/InP photodiodes grown by OMVPE
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (1-2) , 90-97
- https://doi.org/10.1016/0022-0248(89)90189-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Metalorganic chemical vapor deposition InGaAs p-i-n photodiodes with extremely low dark currentApplied Physics Letters, 1988
- Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodesJournal of Crystal Growth, 1986
- Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodesElectronics Letters, 1986
- Planar InGaAs PIN photodiode with a semi-insulating InP cap layerElectronics Letters, 1985
- Chemical cleaning of InP surfaces: Oxide composition and electrical propertiesJournal of Applied Physics, 1984
- Surface chemical reactions on In0.53Ga0.47AsApplied Physics Letters, 1983
- Peroxide etch chemistry on 〈100〉In0.53Ga0.47AsJournal of Vacuum Science and Technology, 1982
- A Ga0.47In0.53As/InP heterophotodiode with reduced dark currentIEEE Journal of Quantum Electronics, 1981
- In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunnelingApplied Physics Letters, 1980