Proposal of Source Supply Efficiency Analysis for InGaAsP Grown by MOVPE
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11A) , L1886
- https://doi.org/10.1143/jjap.28.l1886
Abstract
We propose a useful method of analyzing source supply efficiencies for InGaAsP grown by MOVPE. This study of source supply efficiencies has shown that the supply efficiency of arsenic (As) is about one tenth or less than that of indium (In) or gallium (Ga), while that of phosphorus (P) is smaller than that of As and is strongly dependent on the growth temperature. These supply efficiencies can be used to simulate In1-x Ga x As y P1-y alloy composition easily. To obtain a good quality of InGaAsP for a wide range of alloy compositions, we suggest as a guideline that supply efficiencies should be kept constant for any composition.Keywords
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