Comparison between microscopical aspects of a-Si films crystallized by pulsed UV excimer laser and calculated temperature profiles
- 1 December 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 43 (1-4) , 150-157
- https://doi.org/10.1016/0169-4332(89)90204-3
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- A thermal description of the melting of c- and a-silicon under pulsed excimer lasersApplied Surface Science, 1989
- Excimer laser induced oxidation of ion-implanted siliconApplied Physics Letters, 1988
- Explosive crystallization starting from an amorphous-silicon surface region during long pulsed-laser irradiationPhysical Review Letters, 1987
- Time-resolved reflectivity measurements during explosive crystallization of amorphous siliconApplied Physics Letters, 1986
- Modeling of nonequilibrium melting and solidification in laser-irradiated materialsPhysical Review B, 1986
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layersJournal of Applied Physics, 1985
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Bulk nucleation and amorphous phase formation in highly undercooled molten siliconApplied Physics Letters, 1984
- Pulsed laser melting of amorphous silicon layersApplied Physics Letters, 1984