Optically Pumped Stimulated Emission from CuGa(S0.65Se0.35)2/CuAl0.3Ga0.7(S0.65Se0.35)2 Double Heterostructure Grown by Metalorganic Vapor Phase Epitaxy
- 1 May 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (5A) , L624
- https://doi.org/10.1143/jjap.33.l624
Abstract
We report, for the first time, stimulated emission induced by optical pumping at 77 K in CuGa(S0.65Se0.35)2/CuAl0.3Ga0.7(S0.65Se0.35)2 double heterostructures fabricated by metalorganic vapor phase epitaxy. The laser operation occurred at 592 nm above the threshold excitation intensity of 192 kW/cm2. Refractive indexes of the constituent layers of CuGa(S y Se1- y )2 and CuAl x Ga1- x (S y Se1- y )2 were also determined experimentally.Keywords
This publication has 6 references indexed in Scilit:
- Optical properties of A1P-GaP short-period superlatticesSolid-State Electronics, 1994
- Low-Temperature Metalorganic Vapor Phase Epitaxial Growth of CuAlxGa1-x(SySe1-y)2Japanese Journal of Applied Physics, 1994
- Refractive indices of ZnMgSSe alloys lattice matched to GaAsApplied Physics Letters, 1993
- Metalorganic Vapor Phase Epitaxy of CuAlxGa1-x(SySe1-y)2Japanese Journal of Applied Physics, 1993
- MOVPE growth and characterization of I-III-VI2 Chalcopyrite compoundsJournal of Crystal Growth, 1988
- Energy band structure of I–III–VI2 semiconductorsSurface Science, 1973