Voltage, Fluence, and Polarity Dependence of Trap Generation Inside of Thin Silicon Oxide Films

This publication has 9 references indexed in Scilit:

• Stress-induced oxide leakage
  IEEE Electron Device Letters, 1991
• Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films
  IEEE Transactions on Reliability, 1991
• High-field-induced degradation in ultra-thin SiO/sub 2/ films
  IEEE Transactions on Electron Devices, 1988
• Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing
  IEEE Transactions on Nuclear Science, 1986
• Electrical breakdown in thin gate and tunneling oxides
  IEEE Transactions on Electron Devices, 1985
• Determination of SiO2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors
  Applied Physics Letters, 1984
• Observation of positively charged state generation near the Si/SiO₂ interface during Fowler–Nordheim tunneling
  Journal of Vacuum Science and Technology, 1982
• Dielectric breakdown in electrically stressed thin films of thermal SiO2
  Journal of Applied Physics, 1978
• Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2
  Applied Physics Letters, 1977