Temperature dependence of photoluminescence from Mg-implanted GaAs

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Abstract
Photoluminescence emission characteristics from Mg‐implanted GaAs are presented for the temperature range T=4.2–293 °K. The emission due to recombination of free electrons with holes bound to neutral Mg acceptors is a dominant radiative process in heavily implanted samples at temperatures T≲210 °K. Changes in the emission energies and intensities as a function of temperature lead to the determination of the binding energy of Mg as 28±2 meV. The donor‐acceptor pair band involving Mg, which has a large energy shift with the change of excitation intensity, shows the lower‐energy shift with an increase of temperature in the range T=4.2–50 °K. This is explained by associating deeper donor states than the hydrogenic donors to the donor‐acceptor pair band. Depth dependence of the donor‐acceptor pair and the free‐electrons to the neutral Mg acceptor bands show a deep penetration of Mg acceptors.