Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy
- 1 September 1969
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 30 (9) , 2225-2229
- https://doi.org/10.1016/0022-3697(69)90147-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
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