Photoconductor-based 10-110-GHz on-chip device characterization technique
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 607-610
- https://doi.org/10.1109/mwsym.1990.99653
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Millimeter-wave monolithic integrated circuit characterization by a picosecond optoelectronic techniqueIEEE Transactions on Microwave Theory and Techniques, 1989
- High-speed optoelectronic pulse generation and sampling systemIEEE Transactions on Instrumentation and Measurement, 1988
- Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantationIEEE Transactions on Electron Devices, 1988
- Picosecond Reflectometry Technique for On-Chip Characterization of Millimeter-Wave Semiconductor DevicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987