Charge retention of MNOS devices limited by Frenkel-Poole detrapping
- 1 March 1978
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (5) , 335-338
- https://doi.org/10.1063/1.90014
Abstract
A simple analytical expression is derived for charge retention in MNOS memory devices assuming that retention loss is limited by Frenkel-Poole release from monoenergetic traps. This model shows that charge retention becomes eventually independent of the initial charge distribution. Experimental data obtained at elevated temperatures confirm this model and provide a trap depth of 1.5 eV, Frenkel-Poole coefficient of about 6×10−4 cm1/2 V−1/2 eV, and effective escape attempt rate factor of 1.2×108 sec−1.Keywords
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