Extended cavity surface-emitting semiconductor lasers
- 1 January 2006
- journal article
- review article
- Published by Elsevier in Progress in Quantum Electronics
- Vol. 30 (1) , 1-43
- https://doi.org/10.1016/j.pquantelec.2005.10.002
Abstract
No abstract availableKeywords
This publication has 54 references indexed in Scilit:
- Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laserOptics Communications, 2004
- High-power surface emitting semiconductor laser with extended vertical compound cavityElectronics Letters, 2003
- High-power passively mode-locked semiconductor lasersIEEE Journal of Quantum Electronics, 2002
- Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average powerApplied Physics Letters, 2002
- High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laserJournal of the Optical Society of America B, 2002
- Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beamsIEEE Journal of Selected Topics in Quantum Electronics, 1999
- High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beamsIEEE Photonics Technology Letters, 1997
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Analysis of blue and red laser performance of the infrared-pumped praseodymium-doped fluoride fiber laserJournal of the Optical Society of America B, 1994
- Effect of additive-pulse mode locking on an external-cavity surface-emitting InGaAs semiconductor laserOptics Letters, 1993