Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser

This publication has 9 references indexed in Scilit:

• 0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
  IEEE Photonics Technology Letters, 2003
• High-power passively mode-locked semiconductor lasers
  IEEE Journal of Quantum Electronics, 2002
• CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
  IEEE Photonics Technology Letters, 2002
• Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power
  Applied Physics Letters, 2002
• MOCVD InP/AlGaInAs distributed Bragg reflectorfor 1.55 µm VCSELs
  Electronics Letters, 2001
• Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
  IEEE Journal of Selected Topics in Quantum Electronics, 1999
• Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion
  IEEE Journal of Quantum Electronics, 1998
• High temperature pulsed and continuous-wave operation and thermally stable threshold characteristics of vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1994
• Heat flow in interference filters
  Applied Physics B Laser and Optics, 1987