Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 34 (10) , 1904-1913
- https://doi.org/10.1109/3.720226
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement regionApplied Physics Letters, 1997
- Submilliamp 1.3 µm vertical-cavity surface-emittinglasers with threshold current density of < 500 A/cm 2Electronics Letters, 1997
- Design and analysis of double-fused 1.55-μm vertical-cavity lasersIEEE Journal of Quantum Electronics, 1997
- Submilliamp long wavelength vertical cavity lasersElectronics Letters, 1996
- Laterally oxidized long wavelength cw vertical-cavity lasersApplied Physics Letters, 1996
- Low threshold room temperature continuous wave operationof 1.3 µm GaInAsP/InPstrained layer multiquantum well surface emitting laserElectronics Letters, 1996
- Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layerIEEE Photonics Technology Letters, 1994
- Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasersApplied Physics Letters, 1993
- Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrorsIEEE Journal of Quantum Electronics, 1992
- InGaAs vertical-cavity surface-emitting lasersIEEE Journal of Quantum Electronics, 1991