MOCVD InP/AlGaInAs distributed Bragg reflectorfor 1.55 µm VCSELs
- 12 April 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (8) , 500-501
- https://doi.org/10.1049/el:20010329
Abstract
A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VCSELs is presented. The InP/AlGaInAs system presents a high potential for 1.55 µm VCSELs owing to the combination of its high refractive index contrast (Δn ≃ 0.34) and its low conduction band discontinuity (ΔEc ≃ 150 meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and λ cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 µm.Keywords
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