Radiofrequency plasma decomposition of C n F2n+2-H2 and CF4-C2F4 mixtures during Si etching or fluoropolymer deposition
- 1 March 1984
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 4 (1) , 1-14
- https://doi.org/10.1007/bf00567367
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Plasma chemistry of fluorocarbons as related to plasma etching and plasma polymerizationPublished by Springer Nature ,2006
- The use of ?actinometer? gases in optical diagnostics of plasma etching mixtures: SF6-O2Plasma Chemistry and Plasma Processing, 1981
- Dependence of F atom density on pressure and flow rate in CF4 glow discharges as determined by emission spectroscopyJournal of Vacuum Science and Technology, 1981
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980
- The plasma oxidation of CF4 in a tubular-alumina fast-flow reactorJournal of Applied Physics, 1979
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Optical detector to monitor plasma etchingJournal of Electronic Materials, 1978
- End Point Determination of Aluminum CCl4 Plasma Etching by Optical Emission SpectroscopyJournal of the Electrochemical Society, 1978
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977