Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures
- 1 October 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 143 (3-4) , 184-193
- https://doi.org/10.1016/0022-0248(94)90054-x
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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