Modification of interfacial carrier depletion in GaAs grown by molecular beam epitaxy
- 1 July 1992
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (1) , 303-305
- https://doi.org/10.1063/1.352138
Abstract
The magnitude of carrier depletion at the interface between molecular beam epitaxial GaAs and a GaAs substrate is shown to depend upon the length of exposure to ultraviolet ozone radiation. In particular, as the ozone exposure time increases, the interfacial carbon concentration and loss of carriers at the interface decrease. The data suggest a relationship between electrically measured carrier depletion and the impurity species, carbon and silicon, at the interface.This publication has 10 references indexed in Scilit:
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