Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy
- 6 November 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19) , 1987-1989
- https://doi.org/10.1063/1.102141
Abstract
Growth of single-domain GaAs (100) layers on double-domain Si (100) substrates by molecular beam epitaxy has been investigated. It has been shown that domain orientation of the top layer of GaAs depends on the surface structure of a buffer layer. The size of atomic step heights on the Si surface and the As-Si interaction temperature before film growth are not important factors in controlling domain orientation. Suppression of an antiphase disorder is explained in terms of nonstoichiometric antiphase boundary annihilation operative during growth.Keywords
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