Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs
- 1 February 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (2) , 295-298
- https://doi.org/10.1016/0038-1101(90)90169-f
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
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