Modeling semiconductor devices with position-dependent material parameters

This publication has 27 references indexed in Scilit:

• Minority carrier recombination in heavily-doped silicon
  Published by Elsevier ,2002
• Method for simultaneous measurement of diffusivity lifetime, and diffusion length, with application to heavily doped silicon
  IEEE Electron Device Letters, 1989
• Transport equations for highly doped devices and heterostructures
  Solid-State Electronics, 1987
• Measurement of hole mobility in heavily doped n-type silicon
  IEEE Electron Device Letters, 1986
• Controlling heterojunction band discontinuities: A surface physicist's approach
  Solid-State Electronics, 1986
• Semiconductor heterojunction topics: Introduction and overview
  Solid-State Electronics, 1986
• On the inappropriate use of the intrinsic level as a measure of the electrostatic potential in semiconductor devices
  IEEE Electron Device Letters, 1985
• Electrical current and carrier density in degenerate materials with nonuniform band structure
  Proceedings of the IEEE, 1984
• Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment
  Solid-State Electronics, 1983
• Experiments on Ge-GaAs heterojunctions
  Solid-State Electronics, 1962