Bonding in GaAs
- 18 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (3) , 353-356
- https://doi.org/10.1103/physrevlett.61.353
Abstract
Experimental measurements of structure factors in GaAs have been compared with the results of ab initio calculations by the pseudopotential method. We measure the charge in the bond from charge-density maps to be 0.071 electron, in good agreement with theory. The measurements were obtained by an electron-diffraction technique which can be applied to submicron crystals, thus greatly extending the range of materials for which structure factors can be measured, and theoretical calculations tested.Keywords
This publication has 18 references indexed in Scilit:
- The intersecting Kikuchi line technique; critical voltage at any voltageUltramicroscopy, 1985
- Debye–Waller factors of zinc-blende-structure materials – a lattice dynamical comparisonActa Crystallographica Section A Foundations of Crystallography, 1983
- Influence of Doping on the Crystal Potential of Silicon investigated by the Convergent Beam Electron Diffraction TechniqueZeitschrift für Naturforschung A, 1980
- The critical-voltage effect in convergent-beam high-voltage electron diffractionActa Crystallographica Section A, 1980
- The scattering of fast electrons by crystalsReports on Progress in Physics, 1979
- A description of electron diffraction from higher-order Laue zonesActa Crystallographica Section A, 1978
- Determination of structure factors of germanium by the critical-voltage and convergent-beam diffraction methodsPhysica Status Solidi (a), 1976
- Examination of the graphite structure by convergent-beam electron diffractionActa Crystallographica Section A, 1976
- Structure analysis of single crystals by electron diffraction. I. TechniquesActa Crystallographica, 1953
- Zur prüfung der dynamischen theorie der elektronenbeugung am kristallgitterPhysica, 1940