An analytical threshold voltage model for SiGe-channel PMOS devices
- 30 September 1993
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (9) , 1349-1352
- https://doi.org/10.1016/0038-1101(93)90176-q
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
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